> > > >
 Цена: 1488 руб. Мера: шт.
Артикул: 6537
Товар на складе: есть
Полное описание
Модуль памяти Samsung DIMM 512MB DDR2 (2RX8) PC2-3200U-333-10-B1 (400MHZ), Non-Registered, Non-ECC
Характеристики
|
|
E6(DDR2-667) |
D5(DDR2-533) |
CC(DDR2-400) |
Unit |
|
Speed@CL3 |
400 |
400 |
400 |
Mbps |
|
Speed@CL4 |
533 |
533 |
400 |
Mbps |
|
Speed@CL5 |
667 |
- |
- |
Mbps |
|
CL-tRCD-tRP |
5-5-5 |
4-4-4 |
3-3-3 |
CK |
|
JEDEC standard 1.8V± 0.1V Power Supply VDDQ = 1.8V± 0.1V 200 MHz f CK for 400Mb/sec/pin, 267MHz f CK for 533Mb/sec/pin, 333MHz f CK for 667Mb/sec/pin 4 Banks Posted /CAS Programmable /CAS Latency : 3, 4, 5 Programmable Additive Latency : 0, 1, 2, 3 and 4 Write Latency(WL) = Read Latency(RL) - 1 Burst Length : 4, 8(Interleave/nibble sequential) Programmable Sequential / Interleave Burst Mode Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) Off-Chip Driver(OCD) Impedance Adjustment On Die Termination Average Refresh Period 7.8us at lower than T CASE 85°C, 3.9us at 85°C < T CASE ≤ 95°C - support High Temperature Self-Refresh rate enable feature Package : 60ball FBGA - 32M x 8 All of Lead-free products are compliant for RoHS Note : For detailed DDR2 SDRAM operation, please refer to Samsung's Device operation & Timing diagram. |
Address Configuration
|
|
|
Organization |
Row Address |
Column Address |
Bank Address |
Auto Precharge |
|
32Mx8(256Mb) based Module |
A0-A12 |
A0-A9 |
BA0-BA1 |
A10 | | |
